TM 11-5821-284-34
Sequence
Doe
Trouble Symptom
Probable Cause
Corrective Action
No.
Test
(2) If A1A4C-14 is below
+3.0 Vdc check AlA4C
and inputs to A1A4C.
f. If voltage observed at
A1A4C-14 is above +3.0 Vdc
check voltage at A1ASD-14.
(1) If A1A3D-14 is below
+0.3 Vdc proceed to it&n
log.
(2) If A1A3D-14 is above
+0.3 Vdc check A1A3D
and inputs to A1AiD.
g. If voltage at AlA3D-14 is
below +0.3 Vdc check A1Q7
collector voltage
(1) If A1Q7 collector is above
+10.0 Vdc proceed to
item 10h.
(2) If A1Q7 collector is below
+110.0 Vdc check A1CR8,
A1Q7, and A1R8.
h. If voltage at A1Q7 is above
at A1Q8 collector.
collector is the same as
that shown in figures
-2K and -2L proceed to
item 11.
collector is incorrect,
check components asso-
ciated with A1Q8 and
A1Q9.
9
5-12
a. Incorrect voltage at
Defect in sequencing circuit.
Check AlR20, AlR21, A1CI13
collector of AlQ18.
and AlQ13.
b. Incorrect voltage at
Defect in NAND gates.
Check A1A4A-5 and AlA4B-9
A1A4A-5 or AA4B-9.
and inputs to them.
c. Incorrect voltage at
Defect in NAND gates.
Check A1A5A-3 and A1A5B-7 and
A1A5A- or A1ASB--7.
inputs to them.
d. Incorrect voltage at
Defect in NAND gates.
a. If more than one output is
A1ASA-, AIASB7 or
below + 1.0 Vdc check inputs
A1A8C-11.
to A1A3A, A1A3B and
A1A3C.
b. If only one gate has two high
level inputs (above + 3.0 Vdc)
check AlA3.
c. If more than one gate has two
high level inputs (above +3.0
Vdc) check A1A1 and A1A2.
e. Incorrect voltage at A1
Defect in NAND gates.
a. If low voltage output circuit
pin 13, .14 or 15.
does not correspond to the low
voltage output from A1Asa,
A1A3B and A1A3C check the
components in the related
circuits.
b. If there is no low voltage out-
put check the components in
the circuit related to the low
voltage output from AlA3A,
A1A3B and AlA3C.
4-4